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OBSOLETE - PLEASE USE ZXMN2AMCTA
ZXMN2AM832
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
STATIC
I =250 A, V DS =V GS
Drain-Source   Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V (BR)DSS
I DSS
I GSS
V GS(th)
20
0.7
1
100
V
A
nA
V
I D =250 A, V GS =0V
V DS =20V, V GS =0V
V GS = ± 12V, V DS =0V
D
Static Drain-Source On-State
Resistance (1)
R DS(on)
0.09
0.12
0.30
V GS =4.5V, I D =4A
V GS =2.5V, I D =1.5A
Forward Transconductance
(3)
g fs
6.2
S
V DS =10V,I D =4A
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
299
60
33
pF
pF
pF
V DS =15 V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
2.31
ns
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t r
t d(off)
t f
Q g
Q gs
Q gd
2.60
1.55
1.31
3.1
0.7
1.0
ns
ns
ns
nC
nC
nC
V DD =10V, I D =4A
R G ? 6.0 , V GS =5V
V DS =10V,V GS =4.5V,
I D =4A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
0.9
0.95
V
T J =25°C, I S =3.2A,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t rr
Q rr
23
5.65
ns
nC
T J =25°C, I F =4A,
di/dt= 100A/ s
NOTES
(1) Measured under pulsed conditions. Width
300 s. Duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 3 - JANUARY 2005
SEMICONDUCTORS
4
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